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this is information on a product in full production. february 2013 doc id 18415 rev 4 1/16 16 STL56N3LLH5 n-channel 30 v, 0.0076 typ., 15 a stripfet?v power mosfet in a powerflat? 5x6 package datasheet ? production data features r ds(on) * q g industry benchmark extremely low on-resistance r ds(on) very low switching gate charge high avalanche ruggedness low gate drive power losses applications switching applications description this device is an n-channel power mosfet developed using stmicroelectronics? stripfet?v technology. the device has been optimized to achieve very low on-state resistance, contributing to a fom that is among the best in its class. figure 1. internal schematic diagram order code v dss r ds(on) max i d STL56N3LLH5 30 v < 0.009 15 a (1) 1. the value is rated according to r thj-pcb powerflat? 5x6 1 2 3 4 !-v $ ' 3 table 1. device summary order code marking package packaging STL56N3LLH5 56n3llh5 powerflat? 5x6 tape and reel www.st.com
contents STL56N3LLH5 2/16 doc id 18415 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
STL56N3LLH5 electrical ratings doc id 18415 rev 4 3/16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 30 v v gs gate-source voltage +22 / -20 v i d (1) 1. the value is rated according to r thj-c drain current (continuous) at t c = 25 c 56 a i d (1) drain current (continuous) at t c = 100 c 37 a i d (2) 2. the value is rated according to r thj-pcb drain current (continuous) at t pcb = 25 c 15 a i d (2) drain current (continuous) at t pcb =100c 10 a i dm (2)(3) 3. pulse width limited by safe operating area drain current (pulsed) 60 a p tot (1) total dissipation at t c = 25c 62.5 w p tot (2) total dissipation at t pcb = 25c 4 w derating factor 0.03 w/c e as (4) 4. starting t j = 25 c, i d = 60 a, v dd = 50 v single pulse avalanche energy 150 mj t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance junction-case 2 c/w r thj-pcb (1) 1. when mounted on fr-4 board of 1inch2, 2oz cu, t < 10 sec thermal resistance junction-pcb 31.3 c/w
electrical characteristics STL56N3LLH5 4/16 doc id 18415 rev 4 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 250 a 30 v i dss zero gate voltage drain current v gs = 0, v ds = 30 v, 1 a v gs = 0 v ds = 30 v, t c = 125 c 10 a i gss gate body leakage current v ds = 0, v gs = +22 / -20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 2.5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 7.5 a v gs = 4.5 v, i d = 7.5 a 0.0076 0.0099 0.009 0.0112 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25 v, f=1 mhz, v gs =0 - 950 193 27 pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =15 v, i d = 15 a v gs =4.5 v figure 14 - 6.5 3.3 2.4 10 nc nc nc r g gate input resistance f=1 mhz gate dc bias=0 test signal level = 20 mv open drain -1.72.5 table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd =15 v, i d = 7.5 a, r g =4.7 , v gs =10 v figure 13 - 10.8 15.6 14.2 6 - ns ns ns ns
STL56N3LLH5 electrical characteristics doc id 18415 rev 4 5/16 table 7. source drain diode symbol parameter test conditions min typ. max unit i sd source-drain current - 15 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 60 a v sd (2) 2. pulsed: pulse duration= 300 s, duty cycle 1.5% forward on voltage i sd = 15 a, v gs =0 - 1.1 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 15 a, di/dt = 100 a/s, v dd =25 v, tj=150 c - 20 10 1 36 18 ns nc a
electrical characteristics STL56N3LLH5 6/16 doc id 18415 rev 4 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on-resistance i d 10 1 0.1 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10m s 100m s 1 s tj=150c tc=25c s ingle p u l s e am010 3 29v1 i d 60 40 20 0 0 2 v d s (v) 4 (a) 1 3 8 0 100 5v 6v 4v v g s =10v 120 140 3 v am10 33 0v1 i d 60 40 20 0 0 4 v g s (v) 8 (a) 2 6 8 0 100 120 140 v d s = 3 v am10 33 1v1 bv d ss -75 t j (c) (norm) -25 75 25 125 0.92 0.96 1.00 1.04 1.0 8 i d =1ma am10 33 4v1 r d s (on) 9 7 5 3 4 8 i d (a) (m ) 6 10 11 1 3 v g s =10v 12 14 am10 33 5v1
STL56N3LLH5 electrical characteristics doc id 18415 rev 4 7/16 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics v g s 3 2 1 0 0 2 q g (nc) (v) 8 4 4 6 5 v dd =15v i d =15a 6 am10 33 2v1 c 900 600 3 00 0 0 10 v d s (v) (pf) 5 1200 15 ci ss co ss cr ss 20 25 am10 333 v1 v g s (th) 1.0 0. 8 0.6 0.4 -75 t j (c) (norm) -25 1.2 75 25 125 i d =250 a am10 33 6v1 r d s (on) 1.6 1.2 0. 8 0.4 -75 t j (c) (norm) -25 75 25 125 1.6 i d =7.5a v g s =10v am10 33 7v1 v s d 4 8 i s d (a) (v) 6 14 10 12 0.5 0.6 0.7 0. 8 0.9 t j =-55c t j =150c t j =25c am10 338 v1
test circuits STL56N3LLH5 8/16 doc id 18415 rev 4 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STL56N3LLH5 package mechanical data doc id 18415 rev 4 9/16 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STL56N3LLH5 10/16 doc id 18415 rev 4 table 8. powerflat 5x6 type s-r mechanical data dim. mm min. typ. max. a 0.80 1.00 a1 0.02 0.05 a2 0.25 b 0.30 0.50 d 5.00 5.20 5.40 e 5.95 6.15 6.35 d2 4.11 4.31 e2 3.50 3.70 e1.27 l 0.60 0.80 k 1.275 1.575
STL56N3LLH5 package mechanical data doc id 18415 rev 4 11/16 figure 19. powerflat? 5x6 type s-r drawing 8 2 3 1 8 17_rev.f_ri bb on type s -r 5 8 4 1 pin 1 identification 1 4 5 8 pin 1 identification . bottom view s ide view top view
package mechanical data STL56N3LLH5 12/16 doc id 18415 rev 4 figure 20. powerflat? 5x6 recommended footprint (dimensions are in mm) footprint
STL56N3LLH5 packaging mechanical data doc id 18415 rev 4 13/16 5 packaging mechanical data figure 21. powerflat? 5x6 tape (a) figure 22. powerflat? 5x6 package orientation in carrier tape. a. all dimensions are in millimeters. me asu red from centerline of s procket hole to centerline of pocket. c u m u l a tive toler a nce of 10 s procket hole s i s 0.20 . me asu red from centerline of s procket hole to centerline of pocket. (i) (ii) (iii) 2 2.00.1 (i) bo (5. 3 00.1) ko (1.200.1) 0.05) ?1.5 min. ?1.550.05 p ao(6. 3 00.1) f(5.500.1)(iii) w(12.000. 3 ) 1.750.1 4.00.1 (ii) p 0 y y s ection y-y c l p1( 8 .000.1) do d1 e 1 (0. 3 0 t ref.r0.50 ref 0.20 b as e a nd bu lk qua ntity 3 000 pc s 8 2 3 4 3 50_t a pe_rev_c pin 1 identification
packaging mechanical data STL56N3LLH5 14/16 doc id 18415 rev 4 figure 23. powerflat? 5x6 reel 2.20 ?21.2 1 3 .00 core detail 2.50 1.90 r0.60 77 12 8 ?a r1.10 2.50 4.00 r25.00 part no. w1 w2 1 8 .4 (m a x) w 3 06 p s e s d logo at t e n t i o n ob s erve precaution s for handling electro s tat i c s en s itive device s 11.9/15.4 12.4 (+2/-0) a 33 0 (+0/-4.0) all dimen s ion s a re in millimeter s ?n 17 8 (2.0) 8 2 3 4 3 50_reel_rev_c
STL56N3LLH5 revision history doc id 18415 rev 4 15/16 6 revision history table 9. document revision history date revision changes 24-jan-2011 1 first release. 01-jul-2011 2 document status promoted from preliminary data to datasheet. 27-apr-2012 3 added e as value in table 2: absolute maximum ratings . updated table 3: thermal resistance , table 4: on/off states , ta b l e 5 : dynamic and table 7: source drain diode . minor text changes. 13-feb-2013 4 ? added: section 5: packaging mechanical data . ? updated section 4: package mechanical data .
STL56N3LLH5 16/16 doc id 18415 rev 4 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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